PART |
Description |
Maker |
KM23C32000CG |
32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
KM23C32000A |
32M-Bit (2Mx16) CMOS Mask ROM
|
Samsung Semiconductor
|
KM23C32205BSG |
32M-Bit(2Mx16 / 1Mx32) CMOS Mask ROM
|
Samsung Semiconductor
|
K3P6V2000B-SC |
32M-Bit (2Mx16/1Mx32) CMOS MASK ROM Data Sheet
|
Samsung Electronic
|
A82DL32X4T |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM A82DL32x4T(U) 32 Megabit (4Mx8 Bit/2Mx16 Bit) CMOS 3.3 Volt-only Simultaneous Operation Flash Memory
|
AMIC Technology
|
TC58256DC TC58256FT |
256M Bit (32M×8Bits ) CMOS NAND EEPROM(32M×8位与非EEPROM) 256M比特2M的8位)的CMOS闪存EEPROM的(32M的8位与非的EEPROM
|
Toshiba Corporation Toshiba, Corp.
|
CMS3216LAF CMS3216LAG CMS3216LAH |
32M(2Mx16) Low Power SDRAM
|
FIDELIX
|
UPD4632312F9-BE95X-BT3 UPD4632312F9-CE10X-BT3 UPD4 |
Integrated H-bridge with sleep mode PSEUDO-STATIC RAM|2MX16|CMOS|BGA|77PIN|PLASTIC 伪静态内存| 2MX16 |的CMOS | BGA封装| 77PIN |塑料
|
Amphenol, Corp.
|
HYE18P32161AC HYE18P32161ACL70 HYE18P32161ACL85 HY |
Specialty DRAMs - 2Mx16, VGBGA-48; Available 2Q04 32M Asynchronous/Page CellularRAM
|
INFINEON[Infineon Technologies AG]
|
TC58NS256DC |
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 256-MBIT (32M ?8 BITS) CMOS NAND E2PROM (32M BYTE SmartMediaTM)
|
TOSHIBA[Toshiba Semiconductor]
|
LH5332600 LH5332600N LH5332600T |
CMOS 32M(4M X 8/2M X 16) Mask-Programmable ROM CMOS 32M (4M X 8/2M X 16) MROM
|
Sharp Electrionic Components Sharp Corporation
|